narrow band gap semiconductors 窄禁带半导体
narrow-band-gap 窄带隙
narrow band-gap 窄禁带
narrow-band-gap commonomer 窄带隙单体
narrow band-gap semiconductors 窄禁带半导体
The efficient energy transfer due to exciton trapping on the narrow band gap sites was observed.
还观察到极为有效的分子内能量转移。
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。
In the copolymers of fluorene and DBT, the efficient energy transfer due to exciton trapping on narrow band-gap DBT sites has been observed.
在芴与dbt的共聚物中，观察到了由于激子在低带隙单体DBT位置的捕获而产生的有效的能量转移。
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