Most MRAMs that are now being developed writedatabyapplyingthe magnetic field generated by a current running through a wire near a tunneling magnetoresistiveelement to changethemagnetization.
TOKYO-Toshiba Corporation (TOKYO: 6502) today announced that the company has developed a prototype memory element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) that achieves the world's lowest1 power consumption yet reported, indicating that it has the potential to surpass the power consumption efficiency of SRAM as cache memory.