Most MRAMs that are now being developed write data by applying the magnetic field generated by a current running through a wire near a tunneling magnetoresistive element to change the magnetization.

第一代MRAM的数据写入方式主要是向导线中通电使其周围产生磁场，从而改变邻近的存储单元的磁化程度。

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To lose sight of paired magnetic dipole brim and to equate bound current element, making certain direction and magnitude of a force upon it by Ampere Law.

若忽略磁偶极子对的边缘效应，并将其等效成束缚电流元，可用安培定律来确定其受力大小和方向。

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The current of the rotor slot wedges are measured by magnetic test coils, and the eddy-current field of the rotor are calculated by finite element method.

试验中用“磁带”测量了转子槽楔电流，并用有限元法计算了转子涡流场。

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