the lattice mismatch 了晶格失配
large lattice mismatch 较大的晶格失配
crystal lattice mismatch 界面晶格失配
out-of plane lattice mismatch 垂直膜面晶格不匹配度
Transition layer can reduce interface mutation, mitigate stress, decrease internal stress produced by lattice mismatch, difference of thermal expansion coefficient.
过渡层可减少界面物理性能的突变,缓和应力集中,减小薄膜与基底因晶格失配、热膨胀系数差异而造成的内应力。
参考来源 - 卷绕直流磁控溅射法制备铜膜及其性能研究Currently, except the GaN substrate, lattice mismatch and thermal expansion coefficient mismatch exist between other substrates and GaN nanomaterials. Therefore, the use of appropriate substract and buffer layer becomes the focus of attention of researchers.
目前,除GaN衬底外,其他衬底与GaN纳米材料之间均存在晶格失配和热膨胀系数失配,因此,采用合适的衬底并借助缓冲层成了研究者关注的热点。
参考来源 - GaN纳米材料的CVD制备与研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Notably, a twisting mode arising from curvature-induced lattice mismatch emerges with the rippling in the bent nanotubes.
同时，在模拟过程中，观察到了弯曲诱发扭转的现象，并揭示出扭转变形的内在起因是曲率诱导的晶格错配。
In the case of considering the misfit dislocation, relaxed lattice mismatch, the radius of curvature and density of misfit dislocation were calculated.
在考虑存在失配位错的情况下，计算了驰豫晶格失配、曲率半径和失配位错密度。
However, the simulation results of the superlattice with 4% lattice mismatch show that the thermal conductivity increases monotonically with the period length.
而对于具有4%晶格失配的超晶格模拟结果却表明，超晶格导热系数随周期长度的增大而单调上升。
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