It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low...

与常温情况相比，低温下本征载流子浓度将随杂质浓度的上升更为剧烈地上升。

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A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented.

本文提出了低温区高精度的禁带宽度的表达式，获得了低温区本征载流子浓度的简明公式。

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