As interconnection wire spacing becomes smaller and the circuit operating frequency runs higher, the problems of crosstalk noises and spot defects become very crucial.

随著积体电路中线路之间的距离越来越小且整个电路的运算速度也越来越快，因此交感杂讯（crosstalk noises）和瑕疵点（spot defects）的问题亦日趋重要。

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The methods of 3d interconnection can be classified into the wire bonding, flip chip, through silicon via (TSV) and film wire technology, whose advantages and disadvantages are analyzed.

将实现3d互连的方法分为引线键合、倒装芯片、硅通孔、薄膜导线等，并对它们的优缺点进行了分析。

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The RF characteristics of bonding wire interconnection in a simple package model were simulated.

针对一种用键合线连接的简单封装模型进行射频性能的模拟。

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