SOI refers to the use of a layered silicon-insulator-silicon substrate in IC manufacturing, which is said to reduce parasitic device capacitance and improve performance.
SOI指的是在IC的制造过程中采用硅+绝缘层+硅的硅基体结构方式，这种结构方式的优势是可以减小器件的寄生电容并改善器件的性能。
Using IC-compatible silicon as substrate and MEMS processing technology, it is fabricated with silicon wet etching and SU8 micro reaction pool.
以与IC兼容的硅作为基底材料，利用MEMS加工工艺，采用硅腐蚀及SU8微反应池方法制成了新型微电极传感器。
Using silicon wafer as substrate makes compatibility with IC technology possible.
使用硅片作为衬底使得与IC工艺的兼容成为可能。
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