The gate region was fabricated by V-groove and Al sputtering, which can simplify the process, and make devices flexible in the adjustment process.
使用V形槽工艺，用溅射铝的方法代替扩硼工艺制备静电感应晶体管的栅极区，简化了工艺流程，使器件在调试过程中具有很大灵活性。
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
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