In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gate charge test.

为了更直观地描述低压大电流VDMOS器件特性，对器件栅电荷特性进行了测量和提取。

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Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).

碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。

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This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.

本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。

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