gate-to-source voltage 栅极 ; 栅源电压
forward gate-to-source breakdown voltage 正向栅源击穿电压
Gate to Source Contact Spaces 栅极到源极接触孔
Therefore, Q1 must withstand a gate-to-source voltage higher than this value.
因此，Q 1必须经受门源极电压高于这个值。
These reports can serve as a quality gate, helping you determine if proceeding to the testing phase is realistic or if you should remediate your the source code.
这些报告可以作为质量检验关，帮助您决定继续到测试阶段是不是实际的，或者是否需要重新评价源代码。
This kind of electrostatic breakdown destroys the short-circuit ring of TFT and leads to the short between the gate and the source.
这种静电击穿破坏TFT产品的短路环，引起栅极与源漏电极短路。
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