With development of semiconductor technology and downscaling of the memory device size, conventional poly-silicon floating gate flash memories are facing severe challenges.
随着半导体工艺技术的不断发展,存储单元特征尺寸不断减小,传统的多晶硅浮栅快闪存储器正面临着严峻的挑战。
参考来源 - 基于分离电荷存储的MOS结构存储效应及机理研究·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
Other FLASH memories still retain the ability to program in byte wide increments.
另一些FLASH内存还保留着字节编程的能力，这些能力取决于…
USB thumb drives, Secure Digital Card (SD) memories and other flash memories are rapidly increasing in popularity and capacity.
US B拇指驱动器，安全数码卡(SD)记忆和其他快闪记忆体正在迅速增加人气和能力。
In a NOR device, each block in the flash memory can be erased up to 100,000 times. NAND flash memories can be erased up to one million times.
在NOR设备中，flash内存中的每个块可被擦除100,000次，而在NAND flash内存中可达到一百万次。
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