field-emission emitter array diode 场致发射体阵列二极管
The T-shaped edge field emitter arrays were successfully fabricated with each emitter possessing much larger emission area than needle-shaped emitters.
提出了一种T形结构的边缘场发射阴极，它具有比通常的场发射体的发射面积大得多的特点。
The results showed that this field emitter array had good field emission performance and stability.
结果表明，该场发射阵列具有良好的场发射性能及发射稳定性。
As the core content of vacuum microelectronics, the performance of field emitter array (FEA) directly influences the whole performance of field emission device.
场发射阵列阴极(FEA)作为真空微电子学的核心内容，其性能的好坏直接影响着场发射器件的总体性能。
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