Using mean_field theory, the effects of the interfacial quantum fluctuation on the dielectric property of a ferroelectric superlattice is studied within the framework of the transverse Ising model.
应用平均场理论，在横场伊辛模型的框架内，研究了界面量子起伏对铁电超晶格介电性质的影响。
The ferroelectric memory devices utilizing the property of polarization reverse, nonlinear optic devices and electron optic devices had been applied in some case.
利用极化反转特性的铁电存贮器件以及非线性光学效应和电光效应已部分得到应用。
The invention is capable of improving level difference coverage property of ferroelectric film.
根据本发明可以提高强电介质膜的段差覆盖性。
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