Fermi level pinning 费米能级钉扎 ; 效应 ; 钉扎效应
intrinsic Fermi level 半导体的本质费米能阶 ; 本质费米能阶
surface Fermi Level 表面费米能阶
Pinning g of Fermi level 费米能级的钉扎
quasi fermi level 准费密能级
Fermi level diagram 费密能级 ; 费密能级图
pinning of fermi level 费米能级的钉扎
hole quasi fermi level 空穴准费米能级
fermi-level 费米能级
At the same time, some calculations about the Fermi level and mobility edge could effectively explain some fine experimental results.
同时,通过对ITO薄膜材料光学禁带及费米能级迁移率边等的计算,可以解释ITO薄膜材料的电学性质以及有关光学性质的变化原因。
参考来源 - ITO薄膜红外低发射率机理研究When the Fermi level is near the valence band (inversion for P-channel MOSFET), the accept interface traps are neutral, and the donor interface traps are positively charged, leading to a negative threshold voltage shift contribution from the interface traps.
而对PMOSFET，当费米能级临近价带(P沟晶体管反型)时，施主型界面态陷阱带正电荷，受主型界面态陷阱为中性，界面态陷阱将引起负的阈值电压漂移。
参考来源 - 集成电路电离辐射效应数值模拟及X射线剂量增强效应的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
N the level in the distribution of electron energies in a solid at which a quantum state is equally likely to be occupied or empty 费米能级
The local density of states at the Fermi level increases with the adsorption of hydrogen molecules.
氢分子吸附后，费米能级处的局域态密度增加。
The Fermi level and conductivity have been recursively calculated under the electroneutrality condition, which are in fairly agreement with the experiment.
在电中性条件下，用迭代法求出费米能级与电导率，与实验结果吻合较好。
With the two dimensional electron gas model, considering the nonlinear shift of Fermi level with electron gas density, the DC output characteristics is calculated.
考虑费米能级随二维电子气浓度的变化，计算了器件的直流特性。
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