...位(E)，与氧化剂浓度[Cu+2]成正比，与还塬剂浓度[Cu+1]增多是时，其ORP会降低，当Cu+2增加时，其ORP会升高而蚀刻速率(Etch Rate)也将加快。当ORP升高时，蚀刻曲线也会向上扬升而加快。
基于108个网页-相关网页
differential etch rate 微分腐蚀速度
n etch rate 型半导体腐蚀速度
n etch rate n 型半导体腐蚀速度
oxide-etch-rate modification 氧化物腐蚀速度调整
Variations in Polysilicon Etch Rate 多晶硅刻蚀率的变化
etch-rate 腐蚀速率
HF etch rate HF蚀刻速率
BHF etch rate BHF腐蚀速度
micro-etch rate 微蚀速率
Pore size and porosity of nanoporous GaN increase with applied voltage increasing for the same Si-doped GaN, and pore density and etch rate increase first, and decrease when applied voltage is larger than a certain value.
同一硅掺杂浓度的n-GaN,多孔GaN材料的孔尺寸和孔洞率随外加偏压的增加而增大,多孔GaN材料的孔密度和刻蚀速率随外加偏压是先增大,当达到某一值后开始下降。
参考来源 - ⅢA preliminary real-time measurement is developed on the basis of the HF differential etch rate method. The new method has tremendous potential in improving measurement efficiency.4.
3.在HF差动蚀刻速率法基础上,初步开发出一种实时测量方法,以进一步提高测量效率。
参考来源 - 光学材料磨削加工亚表面损伤测量的理论与实验研究·2,447,543篇论文数据，部分数据来源于NoteExpress
More often , all of the materials etchant have a finite etch rate.
剂中的材料都具有一定的刻蚀速率。
More often, all of the materials exposed to the etchant have a finite etch rate.
通常，所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。
A novel method for measuring the anisotropic etch rate distributions of Si is described.
介绍了一种测定硅各向异性腐蚀速率分布的新方法。
应用推荐