The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The discharge breakdown time, peak current as a function of charge voltage and buffer gas are obtained.
得到了放电击穿时间、放电峰值电流随充电电压、不同气体介质变化的曲线；
Simulation results demonstrate: the chaotic modulation signals generated from the four kinds of chaotic sources can all reduce the peak level of the input current and the output voltage spectrums.
仿真结果表明：四种混沌源调制生成的混沌开关调制信号，均能够降低电源的输入电流及输出电压的频谱峰值。
应用推荐