The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.
通过分析MOS管在饱和区失配因素，优化MOS管失配模型，提出用最小二乘曲线拟合法进行相关模型参数提取。
Thus, operating even under lower voltage of power source, each transistor can still be operated at saturation region normally.
因此即使在低电源电压操作下，各晶体管仍可正常地在饱和区工作。
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