The wire sawing process has been applied to slice single silicon into thin wafers for its character of minimum warp, uniform thickness and low kerf loss.

由于线锯切割具有切片薄、表面翘曲变形小、厚薄均匀和切口损失小等优点，被广泛用于单晶硅切片加工。

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The method comprises a step of removing a thin slice of the integrated circuit chip from part of the thickness along the direction vertical to the structure length.

所述方法包括以沿垂直于所述结构长度的方向的方式从所述厚度 的部分去除一所述集成电路芯片的薄片。

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