thin film stress 薄膜应力
thin film residual stress 薄膜残余应力
stress in thin film 薄膜中的应力
stress relief thin-film 应力消减薄膜
residual stress of thin-film 薄膜残余应力
Through the selection of processing parameters and surface modification. The distribution of thin film stress is possible changed and thin film property is improved.
通过选择适当的工艺条件以及表面处理可以改变薄膜的应力分布，提高薄膜的性能。
The measurement of stress change in thin film by Substrate Curvature method is introduced in this paper.
有关薄膜应力的一般测量方法存在精度不高和不能实时测量的缺点。
In order to meet the requirements of optical, electronic and mechanical performance of semiconductor products, it is necessary to measure thin film stress during the deposition.
为使半导体产品达到所要求的光学、电子和机械性能，必须实时地在沉积过程中直接测量薄膜应力。
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