The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment.
多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数。
Open circuit voltage decay (OCVD) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight, easy operation and good repeatability.
开路电压衰减法(OCVD)具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。
For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.
对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。
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