Such a serious mistake not only can be found in manuscripts but also exists world-widely in the formal chemical-academic publications dealing with single crystal density.
这一错误不仅大量地出现在尚未正式出版的来稿中，而且广泛地存在于国内外已正式出版、涉及单晶密度的化学类学术现刊里。
The dislocation etch pits density(EPD) of copper single wires is related with corroded time, deformative extent and crystal orientation of material.
铜单晶线材中位错蚀坑密度与材料浸蚀时间，变形量以及晶体学取向有关。
After deformation and heat treatment, single crystal al wire will generate a mass of dislocation cells, high density dislocations and evident recovery phenomena.
单晶铝线材在变形和加热后会产生大量的位错胞、高密度位错和明显的回复再结晶现象。
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