Finally, this paper primarily establishes a testing method of characterization silicon carbide wafer quality.

最后，初步确立了表征碳化硅单晶抛光片质量的测试方法。

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Characterization method of defects in silicon carbide by chemical etching and optimal process parameters are obtained.

论文得到了用腐蚀法表征碳化硅材料缺陷的方法和优化的工艺参数。

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The research about silicon carbides was at the initial stage, especially the characterization, formation mechanism and distribution of defects.

目前，碳化硅的研究仍然处于起步阶段，尤其是对缺陷的表征、形成机理和分布都没有深入的研究。

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