For reactive sputtering, the gradient films with varying ratio of chemical component can be prepared by changing gas flow rate continuously.
对于反应溅射，可通过连续改变反应气体流量制得化学成分比连续变化的梯度薄膜。
The influence of chamber pressure, gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.
对二氧化硅反应离子刻蚀中反应室压力，刻蚀气体流量和射频功率等因素对刻蚀速率和刻蚀均匀性的影响进行了研究。
应用推荐