...原理计算；点缺陷浓度；形成焓；Wagner–Schottky模型[gap=1549]etallic; first-principle calculation; point defects density; formation enthalpy; Wagner–Schottky model..
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The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.
快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。
Firstly, the influence of point defects on the density of states and conductance for metallic carbon nanotubes is studied based on the tight-binding model.
首先，基于紧束缚模型研究了非磁性点缺陷对金属型单壁碳纳米管态密度和电导的影响。
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