Burn-out of a microwave power device due to the poor bonding between beryllium oxide and base metal sink was investigated using Sound Scanning technique.
利用声学扫描检测技术，提示了热烧毁的微波功率器件氧化铍陶瓷基片与底座金属散热片的焊接不良现象；
A novel structure has been designed and applied in metallization system of microwave power device, in which backflow effect is taken to increase the electromigration resistance.
在回流动力学理论和实验研究的基础上，将回流加固结构应用于实际微波功率器件。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
应用推荐