MOSIC metal-oxide-semiconductor integrated circuit 金属氧化物半导体集成电路
complementary metal-oxide-semiconductor integrated circuit CMOS电路
double diffused metal-oxide-semiconductor integrated circuit DMOS电路
high Performance metal-oxide-semiconductor integrated circuit HMOS电路
metal-nitride-oxide semiconductor integrated circuit 金属
metal-oxide-semiconductor type integrated circuit 金属氧化物半导体集成电路
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。
A complementary metal oxide semiconductor (CMOS) readout integrated circuit (ROIC) for the sensitive material of vanadium dioxide (VO_2) was introduced.
介绍了一种针对二氧化钒敏感材料的CMOS读出电路(RO IC)。
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