The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.
本文研究了直拉硅单晶的氧内吸杂(IG)工艺中,单晶的碳含量对缺陷形成的影响。
Rapid thermal process (RTP) was used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.
将快速热处理(RTP)引入到快中子辐照掺氮直拉硅的内吸杂工艺中。
Rapid thermal process (RTP) was first used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.
首次将快速热处理(RTP)引入到快中子辐照直拉硅的内吸杂工艺中。
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