The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.

实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。

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According to defect chemistry of BaTiO3 semiconducting ceramics, the composition of the interface state was researched. Amethod of the interface state density measurement was proposed.

同时对钛酸钡系ptcr半导瓷界面态的组成进行了研究，并提出一种直接测量界面态密度的方法。

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And in hot state, the formation of fluid stratified interface in the density lock will stop the large circulation of fluid movement.

热态时，密度锁内分层界面的形成对大环流运动起到了阻碍作用。

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