... induced gate current noise 感应闸极电流杂讯 induced leakage current 漏电流 Induced r current zethod 感应电流法 ...
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Stress-Induced Leakage Current 应力感应的漏电流 ; 的漏电流 ; 藉由电容之受压漏电 ; 应力所导致的漏电流
Stress Induced Leakage Current Faults 应力导致漏电流
gate induced drain leakage current 栅极感应漏极漏电流
The generation mechanism of stress induced leakage current (SILC) in flash memory cell is studied by experiments.
通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理。
Under both stress conditions stress induced leakage current follows a power law against stress time with different power factors.
在这两种应力条件下，应力导致的漏电流与时间的关系均服从幂函数关系，但是二者的幂指数不同。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
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