The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.
本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；
The improved method is suitable for routine analysis of trace tungsten in geological samples.
本方法尤其适用于低含量、大批量钨矿样品的测定。
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