The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOI RESURF structure.
采用ADI与高阶紧致差分相结合的方法计算薄膜soi RESURF结构击穿电压。
In this paper, we apply ADI and high-order compact finite difference method for large-scale asymmetric sparse matrix in semiconductor device simulation.
采用AD I与高阶紧致差分相结合的方法计算大型非对称稀疏矩阵，并实现了该算法在半导体器件模拟中的应用。
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