This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.

介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。

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A simulated three dimensional thin film head field was utilized in the write process and a giant-magnetoresistive (GMR) head was used in the read process.

在写入过程中采用了模拟的三维薄膜磁头，在读出过程中用的是巨磁阻(GMR)磁头。

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