失效是可以了 解的, 总剂量辐射导致功率 MOSFET(power MOSFET) 的失效是因为门槛电压(gate threshold voltage) 的减少。 实际上， 有些辐射量甚至使门槛电压变为负数。
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... gate trigger voltage 栅极触发电压 gate threshold voltage 栅极阈值电压 ; 极临界电压 gate nontrigger voltage 栅极不启动电压 ...
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Gate-emitter threshold voltage 发射极间的阈值电压
The body region was doped high to increase the back gate threshold voltage.
增加体区掺杂，以提高背栅阈值电压；
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。
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