...结 构之中[17]，由于 PECVD 之制程温度属于低温，且氮化矽不易被水 气或氧渗透之特性，故主要可作为场氧化层(Field oxide layer)与浅沟 槽隔離(Shallow trench isolation)结构制作时之硬式罩幕(Hard mask)。
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A related layer is the field oxide, which provides isolation from other device structures.
一个相关层是场氧化层，使其与其它器件结构分离。
The invention relates to an inorganic high resistance layer at the side surface of a metallic oxide resistor and a forming method thereof, belonging to the technical field of resistors.
本发明涉及一种金属氧化物电阻片侧面的无机高阻层及其形成方法，属于电 阻片技术领域。
A preparation method of anodic aluminum oxide film with thick barrier layer is provided, which belongs to the field of material technology.
一种属于材料技术领域的具有厚阻挡层的阳极氧化铝薄膜的制备方法。
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