n type doping n 型掺杂
n type doping 型掺杂
n-doping 还原掺杂 ; N掺杂
N doping 氮掺杂
N-type doping 负型掺杂
N-doping technology 氮掺杂技术
Phosphine (PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition (CVD) etc.
磷化氢(PH3)是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
With different barrier width, barrier height, sub-well width, spacer width and n-doping concentration, the changes of DC characteristics of DBRTDs are observed and analyzed.
当势垒厚度、势垒高度、子阱厚度、间隔层厚度、掺杂浓度改变时，可以观察到DBRTD直流特性也随之改变。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
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