With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.

随着器件尺寸的迅速减小，直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素。

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The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.

提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。

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In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.

在中等电场区域，注入电子能通过FN电流和直接隧穿到达能被填充的陷阱，从而使漏电流产生准态饱和。

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