direct band gap semiconductor 直接带隙半导体
direct band gap 直接带隙 ; 直接能带隙
The direct-band-gap energy 禁带带宽
direct wide band gap 直接能带
direct wide band gap material 直接宽带隙材料
MOF-5predicted by the theory is a direct bandgap semiconductor, valence bandmaximum (VBM) and the conduction band minimum (CBM) all located at theG (0,0,0) , direct energy gap of about 3．17eV, indirect energy gap of about3．18eV.
经理论预测MOF-5是一种直接能隙半导体，价带极大值(VBM)与导带极小值(CBM)都位于位于G(0，0，0)点，其直接能隙约为3.17eV，间接能隙约为3.18eV。
参考来源 - 金属有机介孔材料储氢性能的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Meanwhile the composite exhibits the optical features of a semiconductor with direct band gap.
这种复合结构体系具有直接带隙半导体的光学特性。
In recent years, with the extensive application of short wavelength devices, the research of direct wide band gap semiconductor materials attracted more and more attention.
近年来，随着短波长光电器件的逐渐广泛应用，直接宽禁带半导体材料的研究越来越受到人们的重视。
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