It has been designed and constructed with the Intersil High Frequency Bipolar Dielectric Isolation process and features dynamic parameters never before available from a truly differential device.
这已被设计与Intersil的高频双极电介质隔离工艺构造和特点，从一个以前从未真正差速器可用的动态参数。
Combining the two processes, a compatible technology of SOI full dielectric isolation and complementary bipolar process is experimented. Vertical pup and npn transisto…
从实验的角度提出了一种SOI材料全介质隔离与高频互补双极工艺兼容的工艺途径。
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