crystal growth boundary layer 晶体生长边界层
The main structure changes in the creep process were fiber rearrangement, the oxidation of the C-rich interfacial layer and crystal growth within the matrix.
蠕变过程中出现的主要结构变化为纤维重排、富碳界面层的氧化以及基质中晶体的生长。
Concentration boundary layer is an important subject in discussion of interfacial transfer phenomena in crystal growth.
浓度边界层是晶体生长过程中分析界面输运现象的重要元素。
Existing growing device has shortcomings that gold plating is not convenient, plating layer is not uniform, and crystal growth has great stress.
现有的生长装置存在镀金不方便、镀层不均匀、晶体生长应力大等弊端。
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