C-bias 栅偏压 ; 丙偏压
C battery C bias 栅偏压
C-bias detector 栅偏压检波器
NB No C Bias 无偏压
automatic c bias 自给偏压
magnetic c bias 磁偏置
High quality cubic boron nitride (c BN) films were synthesized in lab built magnetically enhanced active reaction evaporation system with pulsed DC bias.
采用自行研制的磁增强活性反应离子镀系统,在脉冲偏压条件下成功地合成了高品质立方氮化硼(c BN)薄膜。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c - V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
In the neutron radiation environment there occurs the change in C-V characteristics of the Tar-actor diodes. At the given bias the junction capacitance decreases with increase of neutron fluence.
在中子辐照环境下,变容二极管c—V特性发生变化,在给定偏置下,结电容随中子注量的增加而下降。
应用推荐