本文分析了单粒子辐射对集成电路可靠性的影响，特别是对SRAM存储器的影响。
The influence of single particle radiation to IC reliability, especial to SRAM, is analyzed.
超薄栅氧化层的可靠性是MOS集成电路中最重要的问题之一。
The reliability of super thin gate oxides is bne of the most important problems in MOS integrated circuits.
缺陷是影响集成电路成品率与可靠性的主要因素。
The defect is a main factor of affecting IC's yield and reliability.
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