研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
并且考察了添加锑离子、铟离子对钒电池电性能特别是析氢行为的影响。
The influence of electrode activation and trace stibium ion, indium ion added into vanadium electrolyte has been discussed.
讨论了钛离子注入剂量对铅及铅-锑合金耐蚀能力的影响。
The effect of titanium ion implantation dosage on the corrosion behaviors was discussed.
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