研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。

Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.

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讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。

The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.

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