量子穿隧效应或量子隧道效应（Quantum tunnelling effect）为一种量子特性，是如电子等微观粒子能够穿过它们本来无法通过的“墙壁”的现象。这是因为根据量子力学，微观粒子具有波的性质，而有不为零的机率穿过势障壁。
电子在元件中利用量子穿隧效应流动，少量的电子可穿过绝缘层的障碍到达另一边。
Current flows through the device by the process of quantum tunneling: a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator.
量子隧穿效应是指粒子能够穿过正常来说它的能量不足以通过的障碍。
Quantum tunneling is an effect where a particle can pass through a barrier it would not normally have the energy to overcome.
隧穿磁强计是一种利用量子力学中隧道效应原理研制的MEMS磁强计。
Tunneling magnetometer is a kind of MEMS magnetometer based on tunnel effect in quantum mechanics.
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