运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。
The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.
样品在可见光区光吸收率随着初始溶液浓度、退火时间、成膜厚度的增加而增加。
The visible optical absorption of the film increases with increasing annealing time, coating-annealing time and concentration of the starting solution.
采用焊接热模拟方法研究了不同温度退火时热影响区韧性的变化。
The use of welding simulation different temperature on the welding HAZ toughness variation has been studied.
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