主要论述硅谐振微传感器中微现象测量。
Micro phenomena measurement to silicon resonant microsensor are resented in this paper.
对一种硅谐振式压力微传感器敏感结构的边界结构参数进行了优化设计。
The boundary structural parameters of a silicon resonant pressure microsensor are optimized in this paper.
本文中的电压传感器采用电阻分压，可将初级电压直接转化为10v以内的微信号，以供测量保护用，装置具有体积小、传输频带宽、不存在饱和问题、无谐振点等优点。
By adopting resistance divider, the voltage sensor designed in this paper can transform primary voltage into micro-signal less than 10v, which can be used in measurement system directly.
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