本文报道了应用变温光伏方法对半导体表面能级，表面态密度的非破坏性测量原理。

The measured undestructivly theory for the surface energy level and the surface state density of semiconductors fay the method of photovoltages at changed temperatures is reported.

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用该态模型解释了氮化物产生高密度表面态的原因和深表面能级与较浅的瞬态电流激活能间的矛盾。

This new two dimensional surface states model explains the origin of surface states and the contradiction between deep surface levels and the low activation energy of a transient current.

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当光子照射到材料表面时，电子受到光子的激发由一个能级跳到更高的能级上，而这些能级对材料来说是特定的。

When a photon strikes the surface, it excites an electron to a higher energy level, which is specific to the material.

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So, one difference between photoelectron spectroscopy and, for example, the photoelectric effect is that in this case, we're not just looking at one energy level, which is what we were looking at from the surface of a metal, now we're talking about this gaseous atom.

光电子能谱与光电效应的不同点在于，以这种情况为例，我们不只关心一个能级，就像原来在金属表面那样，现在我们研究的是气体原子，所以，我们可以从原子中。

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