晶体管第一层(TFT M1),110 为薄膜晶体管绝缘层(TFT insulation layer),111 为薄膜晶 体管第二层(TFTM2),112 为薄膜晶体管通孔(TFT through hole),113 为薄膜晶体管导电
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本发明公开了一种下栅极式薄膜晶体管,包含栅极、栅极绝缘层以及微结 晶硅层。
The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
与此同时,制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管(TFT)这一课题的需要。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
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