介绍高压浮动MOSFET自举驱动电路的工作原理和高压驱动芯片的内部原理；讨论影响自举电容设计的各种因素，并给出自举电容的计算公式。
The principle of bootstrap driving circuit for high voltage floating MOSFET and the internal circuit principle of high voltage driving IC are introduced.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
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