为了增加更多的死区时间，补偿功率管的切换瞬间短暂延时，增加了一个肖特基二极管，与栅极电阻。

The schottky diode bypasses the gate resistor in the gate discharge path, so that there is no falling edge delay. The delay at the rising edge adds dead time.

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本文介绍了使用低势垒肖特基二极管(LBSD)作为检测微波信号功率元件的微波毫微瓦功率传感器。

Microwave nW power sensor USES low barrier schottky diode (LBSD) as a component for testing the power of microwave signals.

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采用功率MOSFET取代普通二极管或肖特基二极管的同步整流技术，可以使低压大电流变换器的效率得到极大的提高。

Applying the synchronous rectifier technology in which MOSFET replaces common diodes or schottky diodes can increase the efficiency of low-voltage, great-current transformer.

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